For transistor action:
$(1)$ Base,emitter and collector regions should have similar size and doping concentrations.
$(2)$ The base region must be very thin and lightly doped.
$(3)$ The emitter-base junction is forward biased and base-collector junction is reverse biased.
$(4)$ Both the emitter-base junction as well as the base-collector junction are forward biased.
Which one of the following pairs of statements is correct?

In the given circuit, a voltmeter $V$ is connected across a bulb $B$. If the value of the resistor $R$ is increased, what happens?

An $npn$ transistor operates as a common emitter amplifier with a power gain of $10^{6}$. The input circuit resistance is $100\, \Omega$ and the output load resistance is $10\, k\Omega$. The common emitter current gain $\beta$ will be (Round off to the nearest integer).

An oscillator is nothing but an amplifier with

$A$ transistor is used as an amplifier in a common-base configuration. The load resistance is $5 \text{ k}\Omega$, the current gain is $0.98$, and the input resistance is $70 \Omega$. The voltage gain and power gain are, respectively:

Consider the circuit arrangement shown in figure $(1)$ for studying input and output characteristics of an $n-p-n$ transistor in $CE$ configuration. Select the values of $R_B$ and $R_C$ for a transistor whose $V_{BE} = 0.7 \, V$, so that the transistor is operating at point $Q$ as shown in the characteristics shown in figure $(2)$. Given that the input impedance of the transistor is very small and $V_{CC} = V_{BB} = 16 \, V$, also find the voltage gain and power gain of the circuit making appropriate assumptions.