Compare pi-bond strength between B and N in t | vedclass

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(D) In compound $(I)$,the lone pair of electrons on the $N$ atom is partially donated to the empty $d$-orbitals of $Si$ through $p\pi-d\pi$ back-bondi

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$II > I$

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(D) In compound $(I)$,the lone pair of electrons on the $N$ atom is partially donated to the empty $d$-orbitals of $Si$ through $p\pi-d\pi$ back-bonding.This decreases the electron density available for $p\pi-p\pi$ back-bonding with the empty $p$-orbital of $B$.In compound $(II)$,$C$ has no empty $d$-orbitals,so the lone pair on $N$ is fully available for $p\pi-p\pi$ back-bonding with $B$.Therefore,the $\pi$-bond strength is greater in $(II)$,i.e.,$II > I$.

Element	Electronegativity Value
$W$	$2.7$
$X$	$2.1$
$Y$	$0.8$
$Z$	$3.4$

Compare $\pi$-bond strength between $B$ and $N$ in the following compounds: $(I)$ $((CH_3)_3Si)_2N^{-}BH_2$ and $(II)$ $((CH_3)_3C)_2N^{-}BH_2$.

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Element Electronegativity Value
$W$ $2.7$
$X$ $2.1$
$Y$ $0.8$
$Z$ $3.4$
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